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  tl/f/5155 MM54HC4075/mm74hc4075 triple 3-input or gate january 1988 MM54HC4075/mm74hc4075 triple 3-input or gate general description these or gates utilize advanced silicon-gate cmos tech- nology to achieve operating speeds similar to ls-ttl gates with the low power consumption of standard cmos inte- grated circuits. all gates have buffered outputs, providing high noise immunity and the ability to drive 10 ls-ttl loads. the 54hc/74hc logic family is functionally as well as pin- out compatible with the standard 54ls/74ls logic family. the 54hc4075/74hc4075 is functionally equivalent and pin-out compatible with the cd4075b and mc14075b metal gate cmos devices. all inputs are protected from damage due to static discharge by internal diode clamps to v cc and ground. features y typical propagation delay: 11 ns y wide power supply range: 2v 6v y low quiescent current: 20 m a maximum (74hc series) y low input current: 1 m a maximum y fanout of 10 ls-ttl loads connection diagram dual-in-line package y e a a b a c tl/f/5155 1 top view order number MM54HC4075 or mm74hc4075 c 1995 national semiconductor corporation rrd-b30m105/printed in u. s. a.
absolute maximum ratings (note s1&2) if military/aerospace specified devices are required, please contact the national semiconductor sales office/distributors for availability and specifications. supply voltage (v cc ) b 0.5 to a 7.0v dc input voltage (v in ) b 1.5 to v cc a 1.5v dc output voltage (v out ) b 0.5 to v cc a 0.5v clamp diode current (i ik ,i ok ) g 20 ma dc output current, per pin (i out ) g 25 ma dc v cc or gnd current, per pin (i cc ) g 50 ma storage temperature range (t stg ) b 65 cto a 150 c power dissipation (p d ) (note 3) 600 mw s.o. package only 500 mw lead temp. (t l ) (soldering 10 seconds) 260 c operating conditions min max units supply voltage (v cc )26v dc input or output voltage 0 v cc v (v in ,v out ) operating temp. range (t a ) mm74hc b 40 a 85 c mm54hc b 55 a 125 c input rise or fall times v cc e 2.0v (t r ,t f ) 1000 ns v cc e 4.5v 500 ns v cc e 6.0v 400 ns dc electrical characteristics (note 4) t a e 25 c 74hc 54hc symbol parameter conditions v cc t a eb 40 to 85 ct a eb 55 to 125 c units typ guaranteed limits v ih minimum high level 2.0v 1.5 1.5 1.5 v input voltage 4.5v 3.15 3.15 3.15 v 6.0v 4.2 4.2 4.2 v v il maximum low level 2.0v 0.5 0.5 0.5 v input voltage ** 4.5v 1.35 1.35 1.35 v 6.0v 1.8 1.8 1.8 v v oh minimum high level v in e v ih or v il output voltage l i out l s 20 m a 2.0v 2.0 1.9 1.9 1.9 v 4.5v 4.5 4.4 4.4 4.4 v 6.0v 6.0 5.9 5.9 5.9 v v in e v ih or v il l i out l s 4.0 ma 4.5v 4.2 3.98 3.84 3.7 v l i out l s 5.2 ma 6.0v 5.7 5.48 5.34 5.2 v v ol maximum low level v in e v ih or v il output voltage l i out l s 20 m a 2.0v 0 0.1 0.1 0.1 v 4.5v 0 0.1 0.1 0.1 v 6.0v 0 0.1 0.1 0.1 v v in e v ih or v il l i out l s 4.0 ma 4.5v 0.2 0.26 0.33 0.4 v l i out l s 5.2 ma 6.0v 0.2 0.26 0.33 0.4 v i in maximum input v in e v cc or gnd 6.0v g 0.1 g 1.0 g 1.0 m a current i cc maximum quiescent v in e v cc or gnd 6.0v 2.0 20 40 m a supply current i out e 0 m a note 1: absolute maximum ratings are those values beyond which damage to the device may occur. note 2: unless otherwise specified all voltages are referenced to ground. note 3: power dissipation temperature derating e plastic ``n'' package: b 12 mw/ c from 65 cto85 c; ceramic ``j'' package: b 12 mw/ c from 100 cto125 c. note 4: for a power supply of 5v g 10% the worst case output voltages (v oh , and v ol ) occur for hc at 4.5v. thus the 4.5v values should be used when designing with this supply. worst case v ih and v il occur at v cc e 5.5v and 4.5v respectively. (the v ih value at 5.5v is 3.85v.) the worst case leakage current (i in , i cc , and i oz ) occur for cmos at the higher voltage and so the 6.0v values should be used. ** v il limits are currently tested at 20% of v cc . the above v il specification (30% of v cc ) will be implemented no later than q1, cy'89. 2
ac electrical characteristics v cc e 5v, t a e 25 c, c l e 15 pf, t r e t f e 6ns symbol parameter conditions typ guaranteed units limit t phl ,t plh maximum propagation 11 20 ns delay ac electrical characteristics v cc e 2.0v to 6.0v, c l e 50 pf, t r e t f e 6 ns (unless otherwise specified) t a e 25 c 74hc 54hc symbol parameter conditions v cc t a eb 40 to 85 ct a eb 55 to 125 c units typ guaranteed limits t phl ,t plh maximum propagation 2.0v 40 115 145 171 ns delay 4.5v 12 23 29 34 ns 6.0v 10 20 25 29 ns t tlh ,t thl maximum output 2.0v 30 75 95 110 ns rise and fall 4.5v 10 15 19 22 ns time 6.0v 9 13 16 19 ns c pd power dissipation (per gate) 30 pf capacitance (note 5) c in maximum input 5 10 10 10 pf capacitance note 5: c pd determines the no load dynamic power consumption, p d e c pd v cc 2 f a i cc v cc , and the no load dynamic current consumption, i s e c pd v cc f a i cc . 3
MM54HC4075/mm74hc4075 triple 3-input or gate physical dimensions inches (millimeters) order number MM54HC4075j or mm74hc4075j ns package j14a order number mm74hc4075n ns package n14a life support policy national's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of national semiconductor corporation. as used herein: 1. life support devices or systems are devices or 2. a critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. national semiconductor national semiconductor national semiconductor national semiconductor corporation europe hong kong ltd. japan ltd. 1111 west bardin road fax: ( a 49) 0-180-530 85 86 13th floor, straight block, tel: 81-043-299-2309 arlington, tx 76017 email: cnjwge @ tevm2.nsc.com ocean centre, 5 canton rd. fax: 81-043-299-2408 tel: 1(800) 272-9959 deutsch tel: ( a 49) 0-180-530 85 85 tsimshatsui, kowloon fax: 1(800) 737-7018 english tel: ( a 49) 0-180-532 78 32 hong kong fran 3 ais tel: ( a 49) 0-180-532 93 58 tel: (852) 2737-1600 italiano tel: ( a 49) 0-180-534 16 80 fax: (852) 2736-9960 national does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and national reserves the right at any time without notice to change said circuitry and specifications.


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